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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 输出电流 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管技术 | 最大耗散功率(Abs) | 恢复时间 | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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 | NTLJD3181PZTAG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 6-WDFN Exposed Pad | 6 | SILICON | 2 | 14 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 710mW | 无铅 | 未说明 | 未说明 | 6 | 不合格 | Dual | 增强型MOSFET | 1.5W | 2 P-Channel (Dual) | SWITCHING | 100m Ω @ 2A, 4.5V | 1V @ 250μA | 450pF @ 10V | 7.8nC @ 4.5V | 9ns | 20V | 9 ns | 2.2A | 8V | 3.2A | 0.1Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
| NTLJD3183CZTBG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 6-WDFN Exposed Pad | 6 | SILICON | 2.6A 2.2A | 2 | 14 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 710mW | 无铅 | 未说明 | 未说明 | 6 | 不合格 | Dual | 增强型MOSFET | 1.5W | DRAIN | N and P-Channel | SWITCHING | 68m Ω @ 2A, 4.5V | 1V @ 250μA | 355pF @ 10V | 7nC @ 4.5V | 9ns | N-CHANNEL AND P-CHANNEL | 12.5 ns | 2.2A | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | SLA5068 LF853 | Sanken | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 通孔 | 15-SIP | 15-SIP | 7A | 150°C TJ | Tube | 2001 | 活跃 | 1 (Unlimited) | 5W | 6 N-Channel (3-Phase Bridge) | 100mOhm @ 3.5A, 10V | 2V @ 250μA | 660pF @ 10V | 60V | Standard | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | ALD1105SBL | Advanced Linear Devices Inc. | 数据表 | 41 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | 14-SOIC | 0°C~70°C TJ | Tube | 2006 | 活跃 | 1 (Unlimited) | 70°C | 0°C | 500mW | Dual | 500mW | 500mW | 2 N and 2 P-Channel Matched Pair | 500Ohm @ 5V | 1V @ 1μA | 3pF @ 5V | 10.6V | 2mA | 13.2V | -12V | Standard | 1.2kOhm | 500 Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | ALD210800SCL | Advanced Linear Devices Inc. | 数据表 | 71 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | 16 | 16-SOIC | 80mA | 10 ns | 0°C~70°C TJ | Tube | 2014 | EPAD®, Zero Threshold™ | 活跃 | 1 (Unlimited) | 70°C | 0°C | 500mW | 500mW | 500mW | 4 N-Channel, Matched Pair | 25Ohm | 20mV @ 10μA | 15pF @ 5V | 10.6V | 80mA | 10V | 15pF | 逻辑电平门 | 25Ohm | 25 Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | ALD110800PCL | Advanced Linear Devices Inc. | 数据表 | 53 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 通孔 | 通孔 | 16-DIP (0.300, 7.62mm) | 16 | 16-PDIP | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD®, Zero Threshold™ | 活跃 | 1 (Unlimited) | 70°C | 0°C | 500mW | 500mW | 500mW | 4 N-Channel, Matched Pair | 500Ohm @ 4V | 20mV @ 1μA | 2.5pF @ 5V | 10.6V | 12mA | 10.6V | 10V | 2.5pF | Standard | 500Ohm | 500 Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | PHKD13N03LT,118 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 23 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | TrenchMOS™ | e4 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3.57W | 鸥翼 | 260 | 30 | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 3.57W | 2 N-Channel (Dual) | SWITCHING | 20m Ω @ 8A, 10V | 2V @ 250μA | 752pF @ 15V | 10.7nC @ 5V | 7ns | 30V | 11 ns | 10.4A | MS-012AA | 20V | 0.02Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | NTZD3152PT5G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | SILICON | 2 | 35 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | ESD PROTECTION, LOW THRESHOLD | -20V | 250mW | FLAT | 260 | -430mA | 40 | NTZD3152P | 6 | 不合格 | Dual | 增强型MOSFET | 250mW | 2 P-Channel (Dual) | SWITCHING | 900m Ω @ 430mA, 4.5V | 1V @ 250μA | 175pF @ 16V | 2.5nC @ 4.5V | 12ns | 20V | 12 ns | 430mA | 6V | 0.43A | 0.9Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | Standard | 20 pF | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
 | HAT2210RWS-E | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 7.5A Ta 8A Ta | 150°C | Tape & Reel (TR) | 2005 | Obsolete | 1 (Unlimited) | 1.5W Ta | 2 N-Channel (Dual), Schottky | 24m Ω @ 3.75A, 10V, 22m Ω @ 4A, 10V | 2.5V @ 1mA | 630pF @ 10V 1330pF @ 10V | 4.6nC @ 4.5V, 11nC @ 4.5V | 30V | Logic Level Gate, 4.5V Drive | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TT8J1TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | SILICON | 2 | 130 ns | 150°C TJ | Tape & Reel (TR) | 2009 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 1W | *J1 | 8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 9 ns | 1.25W | 2 P-Channel (Dual) | SWITCHING | 61m Ω @ 2.5A, 4.5V | 1V @ 1mA | 1350pF @ 6V | 13nC @ 4.5V | 35ns | 12V | 85 ns | 2.5A | 10V | 0.061Ohm | 10A | 12V | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | PMGD400UN,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | SILICON | 710mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | TrenchMOS™ | e3 | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 8541.29.00.75 | 鸥翼 | 未说明 | 未说明 | 6 | R-PDSO-G6 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 410mW | 2 N-Channel (Dual) | SWITCHING | 480m Ω @ 200mA, 4.5V | 1V @ 250μA | 43pF @ 25V | 0.89nC @ 4.5V | 30V | 0.71A | 0.48Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 0.41W | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IRF7307PBF | Infineon Technologies | 数据表 | 340 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 5.2A 4.3A | 2 | -55°C~150°C TJ | Tube | 1997 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DUAL | 鸥翼 | 260 | 30 | IRF7307PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 50m Ω @ 2.6A, 4.5V | 700mV @ 250μA | 660pF @ 15V | 20nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | MS-012AA | 5.2A | 0.05Ohm | 21A | 20V | METAL-OXIDE SEMICONDUCTOR | 1.4W | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
 | PMDXB950UPEZ | Nexperia USA Inc. | 数据表 | 17000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | 6-XFDFN Exposed Pad | 500mA | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | 活跃 | 1 (Unlimited) | 未说明 | 未说明 | 6 | 265mW | 2 P-Channel (Dual) | 1.4 Ω @ 500mA, 4.5V | 950mV @ 250μA | 43pF @ 10V | 2.1nC @ 4.5V | 20V | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BSO150N03MDGXUMA1 | Infineon Technologies | 数据表 | 360000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 8A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | OptiMOS™ | e3 | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | Tin (Sn) | 鸥翼 | 未说明 | 未说明 | BSO150N03 | 8 | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.4W | 2 N-Channel (Dual) | SWITCHING | 15m Ω @ 9.3A, 10V | 2V @ 250μA | 1300pF @ 15V | 17nC @ 10V | 30V | 7A | 0.015Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | APTM50HM65FT3G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Chassis Mount, Screw | 底座安装 | SP3 | 3 | SILICON | 4 | 75 ns | -40°C~150°C TJ | Bulk | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 25 | EAR99 | 锡银铜 | 雪崩 额定 | 390W | UPPER | UNSPECIFIED | 25 | R-XUFM-X25 | COMPLEX | 增强型MOSFET | 390W | ISOLATED | 21 ns | 4 N-Channel (H-Bridge) | SWITCHING | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 7000pF @ 25V | 140nC @ 10V | 38ns | 500V | 93 ns | 51A | 30V | 0.078Ohm | 500V | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | APTC60DSKM24T3G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Chassis Mount, Screw | 底座安装 | SP3 | 3 | 2 | -40°C~150°C TJ | Tray | 2012 | CoolMOS™ | 活跃 | 1 (Unlimited) | EAR99 | 462W | 未说明 | 未说明 | 2 N Channel (Dual Buck Chopper) | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 14400pF @ 25V | 300nC @ 10V | 600V | 95A | 20V | METAL-OXIDE SEMICONDUCTOR | 超级交界处 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | APTM50H14FT3G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Chassis Mount, Screw | 底座安装 | SP3 | 32 | SILICON | 4 | 50 ns | -40°C~150°C TJ | Bulk | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 25 | EAR99 | 锡银铜 | 雪崩 额定 | 208W | UPPER | UNSPECIFIED | 25 | R-XUFM-X25 | 1 | Single | 增强型MOSFET | 208W | ISOLATED | 10 ns | 4 N-Channel (H-Bridge) | SWITCHING | 168m Ω @ 13A, 10V | 5V @ 1mA | 3259pF @ 25V | 72nC @ 10V | 17ns | 500V | 41 ns | 26A | 30V | 500V | METAL-OXIDE SEMICONDUCTOR | Standard | 11.5mm | 73.4mm | 40.8mm | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||
| AUIRF7313Q | Infineon Technologies | 数据表 | 161688 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 6.9A | 2 | -55°C~175°C TJ | Tube | 2014 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | 8541.29.00.95 | 鸥翼 | 未说明 | compliant | 未说明 | AEC-Q101 | R-PDSO-G8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2.4W | 2 N-Channel (Dual) | SWITCHING | 29m Ω @ 6.9A, 10V | 3V @ 250μA | 755pF @ 25V | 33nC @ 10V | 30V | MS-012AA | 6.9A | 0.029Ohm | 58A | 30V | 450 mJ | METAL-OXIDE SEMICONDUCTOR | 2.4W | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | APTM100A13SG | Microsemi Corporation | 数据表 | 100 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Chassis Mount, Screw | 底座安装 | SP6 | 6 | SILICON | 2 | 50 ns | -40°C~150°C TJ | Bulk | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 156mOhm | 锡银铜 | 雪崩 额定 | 1.25kW | UPPER | UNSPECIFIED | 7 | R-XUFM-X7 | 1 | Single | 增强型MOSFET | 1.25kW | ISOLATED | 9 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 156m Ω @ 32.5A, 10V | 5V @ 6mA | 15200pF @ 25V | 562nC @ 10V | 9ns | 1000V 1kV | 24 ns | 65A | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | 21.9mm | 108mm | 62mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||
| BSO615CGHUMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 26 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 3.1A 2A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | SIPMOS® | e3 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | 雪崩 额定 | DUAL | 鸥翼 | BSO615 | 8 | 增强型MOSFET | 2W | N and P-Channel | 110m Ω @ 3.1A, 10V | 2V @ 20μA | 不含卤素 | 380pF @ 25V | 22.5nC @ 10V | N-CHANNEL AND P-CHANNEL | 20V | 60V | 3.1A | 0.11Ohm | 47 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | TPIC1502DW | Texas Instruments | 数据表 | 1771 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 24-SOIC (0.295, 7.50mm Width) | SILICON | 11 | -40°C~150°C TJ | Tube | Obsolete | 1 (Unlimited) | 24 | EAR99 | 2.86W | DUAL | 鸥翼 | unknown | TPIC1502 | R-PDSO-G24 | 不合格 | COMPLEX | 增强型MOSFET | 1.5A | 2.86W | AMPLIFIER | 300m Ω @ 1.5A, 10V | 2.2V @ 1mA | 98pF @ 14V | 2.1nC @ 10V | 20V | N-CHANNEL | 1.5A | 0.005A | 0.3Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | DMC3026LSD-13 | Diodes Incorporated | 数据表 | 67500 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 8.2A Ta 8A Ta | 2 | 60.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.2W | DUAL | 鸥翼 | 260 | 30 | 2 | 增强型MOSFET | 9.7 ns | 1.6W | N and P-Channel Complementary | SWITCHING | 25m Ω @ 6A, 10V, 28m Ω @ 6A, 10V | 3V @ 250μA | 641pF @ 15V 1241pF @ 15V | 6nC @ 4.5V, 10.9nC @ 4.5V | 17.1ns | 30V | N-CHANNEL AND P-CHANNEL | 40.4 ns | 6.2A | 20V | 6.5A | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7351PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SO | 8A | 2 | 17 ns | -55°C~150°C TJ | Tube | 2006 | HEXFET® | Discontinued | 1 (Unlimited) | 150°C | -55°C | 2W | IRF7351PBF | Dual | 2W | 5.1 ns | 2W | 2 N-Channel (Dual) | 17.8mOhm @ 8A, 10V | 4V @ 50μA | 1330pF @ 30V | 36nC @ 10V | 5.9ns | 60V | 6.7 ns | 8A | 4V | 20V | 60V | 1.33nF | 30 ns | 逻辑电平门 | 17.8mOhm | 17.8 mΩ | 4 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
 | BSC072N03LDGATMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 8-PowerVDFN | YES | SILICON | 11.5A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 6 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | FLAT | 未说明 | 未说明 | BSC072N03 | 8 | R-PDSO-F6 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 57W | 2 N-Channel (Dual) | SWITCHING | 7.2m Ω @ 20A, 10V | 2.2V @ 250μA | 3500pF @ 15V | 41nC @ 10V | 30V | 11.5A | 0.0094Ohm | 80A | 30V | 90 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
 | APTM10HM19FT3G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | Chassis Mount, Screw | 底座安装 | SP3 | 3 | SILICON | 4 | 95 ns | -40°C~150°C TJ | Bulk | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 25 | EAR99 | 锡银铜 | 雪崩 额定 | 208W | UPPER | UNSPECIFIED | 25 | R-XUFM-X25 | 1 | Single | 增强型MOSFET | 208W | ISOLATED | 35 ns | 4 N-Channel (H-Bridge) | SWITCHING | 21m Ω @ 35A, 10V | 4V @ 1mA | 5100pF @ 25V | 200nC @ 10V | 70ns | 100V | 125 ns | 70A | 30V | 100V | METAL-OXIDE SEMICONDUCTOR | Standard | 11.5mm | 73.4mm | 40.8mm | 无 | 符合RoHS标准 |
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
1.731422
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分类:Transistors - FETs, MOSFETs - Arrays
9.142225
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
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Microsemi Corporation
分类:Transistors - FETs, MOSFETs - Arrays
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Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
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Texas Instruments
分类:Transistors - FETs, MOSFETs - Arrays
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Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
5.938428
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Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
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Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays